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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525
Authors:  Wang Xiaoliang;  Hu Guoxin;  Ma Zhiyong;  Xiao Hongling;  Wang Cuimei;  Luo Weijun;  Liu Xinyu;  Chen Xiaojuan;  Li Jianping;  Li Jinmin;  Qian He;  Wang Zhanguo
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