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InGaN 太阳能电池理论模拟及制备研究 学位论文
, 北京: 中国科学院研究生院, 2010
Authors:  张小宾
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Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 10, 页码: 103003-1-103003-5
Authors:  Deng Qingwen;  Wang Xiaoliang;  Xiao Hongling;  Ma Zeyu;  Zhang Xiaobin;  Hou Qifeng;  Li Jinmin;  Wang Zhanguo
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p-i-n型InGaN量子点太阳能电池结构及其制作方法 专利
专利类型: 发明, 专利号: CN200810240351.4, 公开日期: 2011-08-31
Inventors:  张小宾;  王晓亮;  肖红领;  杨翠柏;  冉军学;  王翠梅;  李晋闽
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