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Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:  Ran JX (Ran Junxue);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Li JP (Li Jianping);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Doping  
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 791-793
Authors:  Wang XL (Wang Xiaoliang);  Wang CM (Wang Cuimei);  Hu GX (Hu Guoxin);  Mao HL (Mao Hongling);  Fang CB (Fang Cebao);  Wang JX (Wang Junxi);  Ran JX (Ran Junxue);  Li HP (Li Hanping);  Li JM (Li Jinmin);  Wang ZG (Wang, Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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2deg  
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 835-839
Authors:  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Ma ZY (Ma Zhiyong);  Ran JX (Ran Junxue);  Wang CM (Wang Cuimei);  Mao HL (Mao Hongling);  Tang H (Tang Han);  Li HP (Li Hanping);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Jinmin LM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(277Kb)  |  Favorite  |  View/Download:1796/711  |  Submit date:2010/03/29
2deg