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Analysis of Modified Williamson-Hall Plots on GaN Layers 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 1, 页码: Article no.16101
Authors:  Liu JQ;  Qiu YX;  Wang JF;  Xu K;  Yang H;  Liu, JQ, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. kxu2006@sinano.ac.cn
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X-ray-diffraction  Thin-films  Growth  
Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays 期刊论文
APPLIED PHYSICS EXPRESS, 2011, 卷号: 4, 期号: 4, 页码: Article no.45001
Authors:  Liu JQ;  Wang JF;  Gong XJ;  Huang J;  Xu K;  Zhou TF;  Zhong HJ;  Qiu YX;  Cai DM;  Ren GQ;  Yang H;  Xu, K, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China. kxu2006@sinano.ac.cn
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Output Voltage  Nanowires  Nanogenerators  Growth  
A practical route towards fabricating GaN nanowire arrays 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Authors:  Liu, JQ;  Huang, J;  Gong, XJ;  Wang, JF;  Xu, K;  Qiu, YX;  Cai, DM;  Zhou, TF;  Ren, GQ;  Yang, H;  Xu, K (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China,kxu2006@sinano.ac.cn
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Light-emitting-diodes  Epitaxial Lateral Overgrowth  Chemical-vapor-deposition  Well Nanorod Arrays  Ultraviolet-light  Growth  Nanogenerators  Dislocations  Brightness  Layers  
Metal electrode influence on the wet selective etching of GaAs/AlGaAs 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 卷号: 29, 期号: 4, 页码: 41208
Authors:  Wang J;  Han Q;  Yang XH;  Wang XP;  Ni HQ;  He JF;  Wang, J (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China, hanqin@semi.ac.cn
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Hydrogen-peroxide Solutions  Iii-v Semiconductors  Pseudomorphic Modfets  Gaas  Fabrication  Transistor  Algaas  
Dislocation cross-slip in GaN single crystals under nanoindentation 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 22, 页码: Art. No. 221906
Authors:  Huang J;  Xu K;  Gong XJ;  Wang JF;  Fan YM;  Liu JQ;  Zeng XH;  Ren GQ;  Zhou TF;  Yang H
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Berkovich Nanoindentation  Thin-films  Indentation  Mechanisms  Epilayers  
High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 20, 页码: Article no.201104
Authors:  Liu SQ;  Han Q;  Zhu B;  Yang XH;  Ni HQ;  He JF;  Wang X;  Li MF;  Zhu Y;  Wang J;  Wang XP;  Niu ZC;  Liu, SQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. sqliu@semi.ac.cn;  hanqin@red.semi.ac.cn
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I-n Photodiodes