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Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 8, 页码: Art. No. 087802
Authors:  Ruan J;  Yu TJ;  Jia CY;  Tao RC;  Wang ZG;  Zhang GY;  Yu TJ Peking Univ Sch Phys State Key Lab Mesoscop Phys Beijing 100871 Peoples R China. E-mail Address: tongjun@pku.edu.cn
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Quantum-well Lasers  Optical Gain  Emission  Gan  Photoluminescence  Semiconductors  Luminescence  Spectra  Origin  Energy  
光纤位移传感器在77和4.2 K下的输出特性研究 期刊论文
光电子·激光, 2009, 卷号: 20, 期号: 3, 页码: 294-297
Authors:  胡新宁;  王秋良;  崔春艳;  韩立;  谢亮
Adobe PDF(293Kb)  |  Favorite  |  View/Download:857/260  |  Submit date:2010/11/23