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Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
Journal of Applied Physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979
Authors:  Luan, Chongbiao;  Lin, Zhaojun;  Feng, Zhihong;  Meng, Lingguo;  Lv, Yuanjie;  Cao, Zhifang;  Yu, Yingxia;  Wang, Zhanguo
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