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GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy 会议论文
COMMAD 2000 PROCEEDINGS, BUNDOORA, AUSTRALIA, DEC 06-08, 2000
作者:  Pan Z;  Li LH;  Wang XY;  Lin YW;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1138/224  |  提交时间：2010/10/29
Operation  会议主办方: La Trobe Univ  Depts Electr Engn & Phys  
Optical transitions in GaNAs/GaAs single quantum well 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Luo XD;  Xu ZY;  Sun BQ;  Pan Z;  Li LH;  Lin YW;  Ge WK;  Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(314Kb)  |  收藏  |  浏览/下载：1159/244  |  提交时间：2010/10/29
Ganas  Photoluminescence  Band Offset  Band Bowing Coefficient  Localized Exciton  Molecular-beam Epitaxy  Alloys  Temperature  Gaasn  
Residual donors in undoped LEC InP 会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:  Zhao YW;  Sun NF;  Sun TN;  Lin LY;  Wu XW;  Guo WL;  Wu X;  Bi KY;  Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(231Kb)  |  收藏  |  浏览/下载：1361/331  |  提交时间：2010/10/29
Indium-phosphide  Carbon  Defects  Growth  
Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Lin YW;  Pan Z;  Li LH;  Zhou ZQ;  Wang H;  Zhang W;  Lin YW Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(195Kb)  |  收藏  |  浏览/下载：1437/289  |  提交时间：2010/11/15
Ganas  Dc Active N-2 Plasma  Molecular Beam Epitaxy  Nitrogen Content  Fourier Transform Infrared Spectroscopy Of Intensity  Band-gap Energy  Gaas1-xnx  Nitrogen