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Two-dimensional semiconductor alloys: Monolayer Mo1-xWxSe2 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 1, 页码: 012101
Authors:  Tongay, S;  Narang, DS;  Kang, J;  Fan, W;  Ko, CH;  Luce, AV;  Wang, KX;  Suh, J;  Patel, KD;  Pathak, VM;  Li, JB;  Wu, JQ
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Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 2, 页码: 021120
Authors:  Chen, ZH;  Jiang, XW;  Dong, S;  Li, JB;  Li, SS;  Wang, LW
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Codoping of magnesium with oxygen in gallium nitride nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 10, 页码: Art. No. 103112
Authors:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail Address: zgwang@uestc.edu.cn;  jbli@semi.ac.cn
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Molecular-beam Epitaxy  
Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 20, 页码: Art. No. 201102
Authors:  You JB (You J. B.);  Zhang XW (Zhang X. W.);  Zhang SG (Zhang S. G.);  Wang JX (Wang J. X.);  Yin ZG (Yin Z. G.);  Tan HR (Tan H. R.);  Zhang WJ (Zhang W. J.);  Chu PK (Chu P. K.);  Cui B (Cui B.);  Wowchak AM (Wowchak A. M.);  Dabiran AM (Dabiran A. M.);  Chow PP (Chow P. P.);  Zhang, XW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn;  paul.chu@cityu.edu.hk
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Zno  Deposition  
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 26, 页码: Art. No. 262105
Authors:  You JB;  Zhang XW;  Cai PF;  Dong JJ;  Gao Y;  Yin ZG;  Chen NF;  Wang RZ;  Yan H;  Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
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Atomic Force Microscopy  Field Emission  Hydrogen  Ii-vi Semiconductors  Plasma Materials Processing  Sputter Deposition  Wide Band Gap Semiconductors  Work Function  Zinc Compounds  
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 10, 页码: Art. No. 102112
Authors:  Ma, P;  Gai, YQ;  Wang, JX;  Yang, FH;  Zeng, YP;  Li, JM;  Li, JB;  Ma, P, Chinese Acad Sci, Inst Semicond, Int Cooperat Base Solid State Lighting, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yqgai@semi.ac.cn;  jbli@semi.ac.cn
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P-type Gan  Molecular-beam Epitaxy  Augmented-wave Method  Vapor-phase Epitaxy  Electrical-properties  Oxygen  Activation  Silicon  
Effects of the wave function localization in AlInGaN quaternary alloys 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 6, 页码: Art.No.061125
Authors:  Wang, F (Wang, Fei);  Li, SS (Li, Shu-Shen);  Xia, JB (Xia, Jian-Bai);  Jiang, HX (Jiang, H. X.);  Lin, JY (Lin, J. Y.);  Li, J (Li, Jingbo);  Wei, SH (Wei, Su-Huai);  Wang, F, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: suhuai_wei@nrel.gov
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Special Quasirandom Structures  
Quantum mechanical effects in nanometer field effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 14, 页码: Art.No.143108
Authors:  Luo, JW (Luo, Jun-Wei);  Li, SS (Li, Shu-Shen);  Xia, JB (Xia, Jian-Bai);  Wang, LW (Wang, Lin-Wang);  Luo, JW, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lwwang@lbl.gov
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Particle Point  
Comparative study for colloidal quantum dot conduction band state calculations 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 14, 页码: Art.No.143108
Authors:  Luo JW;  Li SS;  Xia JB;  Wang LW;  Wang, LW, Lawrence Berkeley Natl Lab, Computat Res Div, Berkeley, CA 94720 USA. E-mail: jwluo@red.semi.ac.cn;  lwwang@lbl.gov
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Electronic-structure  Si Nanocrystals  Level Structure  p Method  Confinement  Clusters  
High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 79, 期号: 18, 页码: 2868-2870
Authors:  Liu HY;  Xu B;  Wei YQ;  Ding D;  Qian JJ;  Han Q;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Temperature-dependence