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Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
作者:  Wei M (Wei Meng);  Wang XL (Wang Xiaoliang);  Pan X (Pan Xu);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Zhang ML (Zhang Minglan);  Wang ZG (Wang Zhanguo)
Adobe PDF(668Kb)  |  收藏  |  浏览/下载：2425/494  |  提交时间：2011/07/15
A SIMPLE METHOD FOR EFFECTIVELY RESTRAIN ELECTROCHEMICAL CORROSION OF POLYCRYSTALLINE SILICON BY HF-BASED SOLUTIONS 会议论文
PROCEEDINGS: IEEE MICRO ELECTRO MECHANICAL SYSTEMS 页: 205-208, Cancun, MEXICO, 2011
作者:  Xie J (Xie J.);  Liu YF (Liu Y. F.);  Zhang ML (Zhang M. L.);  Yang JL (Yang J. L.);  Yang FH (Yang F. H.)
Adobe PDF(2599Kb)  |  收藏  |  浏览/下载：1782/358  |  提交时间：2011/12/13
Architecture-Specific Mapping Tool for SOI-Based FPGA 会议论文
MICRO NANO DEVICES, STRUCTURE AND COMPUTING SYSTEMS, 159: 438-443, Singapore, SINGAPORE, NOV 06-07, 2010
作者:  Zhang QL (Zhang Qianli);  Yu F (Yu Fang);  Li Y (Li Yan);  Li M (Li Ming);  Zhao Y (Zhao Yan);  Chen L (Chen Liang)
Adobe PDF(796Kb)  |  收藏  |  浏览/下载：1657/378  |  提交时间：2011/07/17
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)  |  收藏  |  浏览/下载：1716/433  |  提交时间：2010/03/09
Algan/gan Hemts  
A low power integrated CMOS transmitter for BCI system 会议论文
2007 International Workshop on Electron Devices and Semiconductor Technology, Beijing, PEOPLES R CHINA, JUN 03-04, 2007
作者:  Zhang X (Zhang Xu);  Liu HJ (Liu Haijun);  Liu JB (Liu Jinbin);  Huang BJ (Huang Beiju);  Zhu L (Zhu Lin);  Gu M (Gu Ming);  Chen HD (Chen Hongda);  Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(2334Kb)  |  收藏  |  浏览/下载：1701/342  |  提交时间：2010/03/29
Brain Computer Interface  
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhao C;  Chen YH;  Zhao M;  Zhang CL;  Xu B;  Yu LK;  Sun J;  Lei W;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
Adobe PDF(330Kb)  |  收藏  |  浏览/下载：1656/335  |  提交时间：2010/03/29
Monte Carlo Simulation  
Research on nitrogen implantation energy dependence of the properties of SIMON materials 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Pacific Grove, CA, SEP 05-10, 2004
作者:  Zhang EX;  Sun JY;  Chen J;  Chen M;  Zhang ZX;  Li N;  Zhang GQ;  Wang X;  Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. 电子邮箱地址: yqfzhexia@mail.sim.ac.cn
Adobe PDF(118Kb)  |  收藏  |  浏览/下载：1583/293  |  提交时间：2010/03/29
Nitrogen  
Influence of heated catalyzer on thermal distribution of substrate in HWCVD system 会议论文
THIN SOLID FILMS, 430 (1-2), DENVER, COLORADO, SEP 10-13, 2002
作者:  Zhang Q;  Zhu M;  Wang L;  Liu E;  Zhu M Chinese Acad Sci Dept Phys Grad Sch POB 3908 Beijing 100039 Peoples R China.
Adobe PDF(223Kb)  |  收藏  |  浏览/下载：1226/238  |  提交时间：2010/11/15
Amorphous-silicon  Deposition  
Space-grown SI-GaAs and its application 会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
作者:  Chen NF;  Zhong XG;  Zhang M;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(239Kb)  |  收藏  |  浏览/下载：1763/365  |  提交时间：2010/10/29
Semiinsulating Gallium-arsenide  Floating-zone Growth  Crystal-growth  Zero Gravity  Microgravity  Segregation  Stoichiometry  Silicon  Defects  Insb  
Space grown semi-insulating gallium arsenide single crystal and its application 会议论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4), WARSAW, POLAND, JUL, 2000
作者:  Chen NF;  Zhong XR;  Zhang M;  Lin LY;  Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1404/239  |  提交时间：2010/11/15
Semiinsulating Gaas  Stoichiometry  Defects