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Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59
Authors:  Zhang ML;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Tang J;  Feng C;  Jiang LJ;  Hu GX;  Ran JX;  Wang MG;  Zhang ML Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Algan/gan Heterostructure  Superlattices (Sls)  Root Mean Square Roughness (Rms)  Sheet Resistance  
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Authors:  Luo, WJ;  Wang, XL;  Guo, LC;  Xiao, HL;  Wang, CM;  Ran, JX;  Li, JP;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Gallium Nitride Crack  Low Temperature Aluminum Nitride  Interlayer  Silicon