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Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713
Authors:  Luo WJ;  Wang XL;  Guo LC;  Mao HL;  Wang CM;  Ran JX;  Li JP;  Li JM;  Luo WJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: luoweijun@mail.semi.ac.cn
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Gan  Si(111)  Crack  Aln  Mocvd  
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文
MICROELECTRONICS JOURNAL, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Authors:  Ran JX;  Wang XL;  Hu GX;  Wang JX;  Li JP;  Wang CM;  Zeng YP;  Li JM;  Ran, JX, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: jxran@red.semi.ac.cn
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Gan  Mg Memory Effect  Redistribution  Algan/gan Hbts  Mocvd  Chemical-vapor-deposition  Heterojunction Bipolar-transistors  Fabrication