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GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文
, 中国深圳, 2015
作者:  Yingdong Tian;  Yun Zhang;  Jianchang Yan;  Xiang Chen;  Yanan Guo;  Xuecheng Wei;  Junxi Wang;  Jinmin Li
Adobe PDF(336Kb)  |  收藏  |  浏览/下载：949/5  |  提交时间：2016/06/02
Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films 会议论文
MATERIALS RESEARCH, Chongqing, PEOPLES R CHINA, JUN 09-12, 2008
作者:  Zhao L;  Lu ZX;  Cheng CJ;  Zhao DG;  Zhu JJ;  Sun BJ;  Qu B;  Zhang XF;  Sun WG;  Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
Adobe PDF(392Kb)  |  收藏  |  浏览/下载：1583/344  |  提交时间：2010/03/09
Alxga1-xn  
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1860/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, FW;  Gao, HY;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)  |  收藏  |  浏览/下载：2878/891  |  提交时间：2010/03/09
Gan  Mocvd  Led  Nano-pattern  Sem  Hrxrd  Pl  
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(308Kb)  |  收藏  |  浏览/下载：1813/508  |  提交时间：2010/03/09
Zinc Oxide  X-ray Diffraction  Defects  Single Crystal  
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, JC;  Wang, JX;  Liu, NX;  Liu, Z;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(471Kb)  |  收藏  |  浏览/下载：1983/557  |  提交时间：2010/03/09
Algan  Gan Template  A1n Interlayer  Mocvd  Crack  Interference Fringes  
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhang, Y;  Yan, FW;  Gao, HY;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(929Kb)  |  收藏  |  浏览/下载：3587/1292  |  提交时间：2010/03/09
Gan  Nitrides  Led  Mocvd  Patterned Sapphire Substrate  Wet Etching  
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1382/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1294/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
Synthesis of GaN nanorods with vertebra-like morphology 会议论文
2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Zhuhai, PEOPLES R CHINA, JAN 18-21, 2006
作者:  Gao, HY (Gao, Haiyong);  Li, JM (Li, Jinmin);  Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China.
Adobe PDF(3971Kb)  |  收藏  |  浏览/下载：1225/240  |  提交时间：2010/03/29
Gan Nanorods  Ga2o3/zno Films  Nitritding  Morphology  Chemical-vapor-deposition  Films