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40-Gbps Low Chirp Electroabsorption Modulated Distributed Feedback Laser 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7219, San Jose, CA, JAN 28-29, 2009
作者:  Cheng YB (Cheng Yuanbing);  Pan JQ (Pan Jiaoqing);  Wang Y (Wang Yang);  Zhao LJ (Zhao Lingjuan);  Zhu HL (Zhu Hongliang);  Wang W (Wang Wei)
Adobe PDF(261Kb)  |  收藏  |  浏览/下载：1512/256  |  提交时间：2011/07/14
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1471/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
THIN SOLID FILMS, Taipei, TAIWAN, NOV 12-14, 2004
作者:  Kong LM;  Cai JF;  Wu ZY;  Gong Z;  Niu ZC;  Feng ZC;  Feng, ZC, Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei, Taiwan. 电子邮箱地址: zcfeng@cc.ee.nut.edu.tw
Adobe PDF(152Kb)  |  收藏  |  浏览/下载：1590/489  |  提交时间：2010/03/29
Time-resolved Photoluminescence  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1658/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Zhang, SJ;  Wen, JM;  Song, HP;  Zhu, NH;  Zhang, SJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1363/423  |  提交时间：2010/03/29
Semiconductor Laser Diode  Subtraction Method  Scattering Parameters  Intrinsic Response  Thermal Effect  Frequency-response  
Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Xu Y;  Li YZ;  Song GF;  Gan QQ;  Cao Q;  Guo L;  Chen LH;  Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(258Kb)  |  收藏  |  浏览/下载：1443/381  |  提交时间：2010/03/29
Aigainp Laser Diodes  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1479/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Growth and photoluminescence of InAlGaN films 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang ZG;  Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1290/347  |  提交时间：2010/10/29
Multiple-quantum Wells  Quaternary Alloys  Optical-properties  
Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:  Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1574/334  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Alloys  Gaas1-xnx  Photoluminescence  Relaxation  
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
作者:  Li Q;  Fang ZL;  Xu SJ;  Li GH;  Xie MH;  Tong SY;  Zhang XH;  Liu W;  Chua SJ;  Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(312Kb)  |  收藏  |  浏览/下载：1350/249  |  提交时间：2010/11/15
Piezoelectric Field  Photoluminescence  Temperature