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Growth of ZnO single crystal by chemical vapor transport method 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Zhou, JM;  Dong, ZY;  Wei, XC;  Duan, ML;  Li, JM;  Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：1744/561  |  提交时间：2010/03/29
Zinc Oxide  
High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
作者:  Wang JX;  Wang XL;  Sun DZ;  Li JM;  Zeng YP;  Hu GX;  Liu HX;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1697/427  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Ion-scattering Spectroscopy  Lattice Polarity  Single-crystals  Films  Polarization  Gan(0001)  Surfaces  Growth  Diodes  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)  |  收藏  |  浏览/下载：1258/260  |  提交时间：2010/11/15
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1219/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Optical transitions in GaNAs/GaAs single quantum well 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Luo XD;  Xu ZY;  Sun BQ;  Pan Z;  Li LH;  Lin YW;  Ge WK;  Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(314Kb)  |  收藏  |  浏览/下载：1158/244  |  提交时间：2010/10/29
Ganas  Photoluminescence  Band Offset  Band Bowing Coefficient  Localized Exciton  Molecular-beam Epitaxy  Alloys  Temperature  Gaasn  
Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Yue GZ;  Liu XL;  Wang XH;  Wang CX;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
收藏  |  浏览/下载：969/0  |  提交时间：2010/10/29
Metastability  Antisite  
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：879/0  |  提交时间：2010/10/29
Sapphire  
Growth and characterization of GaN on LiGaO2 and LiAlO2 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China.
收藏  |  浏览/下载：838/0  |  提交时间：2010/10/29
Diodes  
Growth and characterization of GaN on LiGaO2 会议论文
JOURNAL OF CRYSTAL GROWTH, 195 (1-4), LA JOLLA, CALIFORNIA, MAY 31-JUN 04, 1998
作者:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(161Kb)  |  收藏  |  浏览/下载：1055/205  |  提交时间：2010/11/15
Diodes