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GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文
, 中国深圳, 2015
作者:  Yingdong Tian;  Yun Zhang;  Jianchang Yan;  Xiang Chen;  Yanan Guo;  Xuecheng Wei;  Junxi Wang;  Jinmin Li
Adobe PDF(336Kb)  |  收藏  |  浏览/下载：951/5  |  提交时间：2016/06/02
Plasmonic Back Structures Designed for Efficiency Enhancement of Thin Film Solar Cells 会议论文
2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS CLEO AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS): - 2010, San Jose, CA, MAY 16-21, 2010
作者:  Bai WL (Bai Wenli);  Gan QQ (Gan Qiaoqiang);  Song GF (Song Guofeng);  Bartoli F (Bartoli Filbert)
Adobe PDF(627Kb)  |  收藏  |  浏览/下载：1658/201  |  提交时间：2011/07/14
A Novel RFID Tag Chip with Temperature Sensor in Standard CMOS Process 会议论文
2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS: 1109-1112 2010, Paris, FRANCE, MAY 30-JUN 02, 2010
作者:  Zhang Q (Zhang Qi);  Feng P (Feng Peng);  Zhou SH (Zhou Shenghua);  Geng ZQ (Geng Zhiqing);  Wu NJ (Wu Nanjian)
Adobe PDF(627Kb)  |  收藏  |  浏览/下载：1547/352  |  提交时间：2011/07/14
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1863/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yan, FW;  Gao, HY;  Zhang, Y;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH;  Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)  |  收藏  |  浏览/下载：2881/891  |  提交时间：2010/03/09
Gan  Mocvd  Led  Nano-pattern  Sem  Hrxrd  Pl  
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Yin, HB;  Wang, XL;  Hu, GX;  Ran, JX;  Xiao, HL;  Li, JM;  Yin, HB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3395Kb)  |  收藏  |  浏览/下载：1247/326  |  提交时间：2010/03/09
In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Liu, YF;  Xie, J;  Yang, JL;  Tang, LJ;  Yang, FH;  Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1394Kb)  |  收藏  |  浏览/下载：1427/370  |  提交时间：2010/03/09
Films  
Investigation on pressure sensitivity of fiber optic mandrel hydrophone - art. no. 659544 会议论文
Fundamental Problems of Optoelectronics and Microelectronics III丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Harbin, PEOPLES R CHINA, SEP 12-14, 2006
作者:  Zhang, WT (Zhang, Wentao);  Liu, YL (Liu, Yuliang);  Li, F (Li, Fang);  Zhang, WT, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(185Kb)  |  收藏  |  浏览/下载：1229/368  |  提交时间：2010/03/29
Pressure Sensitivity  Fiber Optic  Hydrophone  Transduction  
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1385/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1296/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes