×
验证码:
换一张
忘记密码?
记住我
×
登录
中文版
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
题名
作者
学科领域
关键词
文献类型
出处
收录类别
出版者
发表日期
存缴日期
资助项目
学科门类
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
新闻&公告
在结果中检索
研究单元&专题
中国科学院半导体研... [27]
作者
于芳 [2]
韩培德 [2]
江德生 [1]
金鹏 [1]
侯奇峰 [1]
韩伟华 [1]
更多...
文献类型
会议论文 [27]
发表日期
2010 [1]
2009 [1]
2008 [4]
2007 [1]
2006 [3]
2004 [3]
更多...
语种
英语 [27]
出处
JOURNAL OF... [3]
1998 5TH I... [2]
2004 7TH I... [2]
2008 9TH I... [2]
MICROELECT... [2]
PHYSICA ST... [2]
更多...
资助项目
收录类别
CPCI-S [23]
其他 [3]
CPCI(ISTP) [1]
资助机构
China Natl... [3]
Chinese In... [2]
Chinese In... [2]
IEEE Beiji... [2]
Chinese Ma... [1]
IEEE.; Mot... [1]
更多...
×
知识图谱
SEMI OpenIR
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共27条,第1-10条
帮助
限定条件
文献类型:会议论文
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
作者升序
作者降序
WOS被引频次升序
WOS被引频次降序
题名升序
题名降序
提交时间升序
提交时间降序
期刊影响因子升序
期刊影响因子降序
STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS
会议论文
, Philadelphia, PA, 2009
作者:
Peng WB (Peng Wenbo)
;
Zeng XB (Zeng Xiangbo)
;
Liu SY (Liu Shiyong)
;
Xiao HB (Xiao Haibo)
;
Kong GL (Kong Guanglin)
;
Yu YD (Yu Yude)
;
Liao XB (Liao Xianbo)
Adobe PDF(735Kb)
  |  
收藏
  |  
浏览/下载:2771/686
  |  
提交时间:2010/08/16
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Sun, GS
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)
  |  
收藏
  |  
浏览/下载:1619/274
  |  
提交时间:2010/03/09
In-situ Doping
Boron
Aluminum
Memory Effects
Hot-wall Lpcvd
4h-sic
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Tang J
;
Wang XL
;
Chen TS
;
Xiao HL
;
Ran JX
;
Zhang ML
;
Hu GX
;
Feng C
;
Hou QF
;
Wei M
;
Li JM
;
Wang ZG
;
Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)
  |  
收藏
  |  
浏览/下载:1715/433
  |  
提交时间:2010/03/09
Algan/gan Hemts
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)
  |  
收藏
  |  
浏览/下载:1856/329
  |  
提交时间:2010/03/09
Gas Sensors
Hemt Structures
Mobility
Temperature
Transistors
Growth
Mocvd
Layer
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
  |  
收藏
  |  
浏览/下载:1988/451
  |  
提交时间:2010/03/09
Performance
Heterostructures
Optimization
Mobility
Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Wang Y
;
Han WH
;
Yang X
;
Chen JJ
;
Yang FH
;
Wang, Y, Chinese Acad Sci, Res Ctr Semicond Integrated Technol, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(2039Kb)
  |  
收藏
  |  
浏览/下载:1425/318
  |  
提交时间:2010/03/09
Devices
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:
Sun, G (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Liu, X (Liu, Xingfang)
;
Zhao, Y (Zhao, Yongmei)
;
Li, J (Li, Jiaye)
;
Wang, L (Wang, Lei)
;
Zhao, W (Zhao, Wanshun)
;
Wang, L (Wang, Liang)
;
Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)
  |  
收藏
  |  
浏览/下载:1384/222
  |  
提交时间:2010/03/29
Polycrystalline 3c-sic
Resonator
Doping
Silicon-carbide
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Lei W
;
Chen YH
;
Jin P
;
Xu B
;
Ye XL
;
Wang ZG
;
Huang XQ
;
Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)
  |  
收藏
  |  
浏览/下载:1418/261
  |  
提交时间:2010/03/29
Lateral Intersubband Photocurrent
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Wang, XL
;
Wang, CM
;
Hu, GX
;
Wang, JX
;
Li, JP
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)
  |  
收藏
  |  
浏览/下载:1814/347
  |  
提交时间:2010/03/29
Molecular-beam Epitaxy
2-dimensional Electron-gas
Bulk Gan
Optimization
Layers
Hemts
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
;
Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)
  |  
收藏
  |  
浏览/下载:1189/297
  |  
提交时间:2010/03/29
High Breakdown Voltage
Mobility Transistors
Heterostructures
Sapphire
Ganhemts