中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共25条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Fabrication method of silicon nanostructures by anisotropic etching 会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:  Han, WH;  Yang, X;  Wang, Y;  Yang, FH;  Yu, JZ;  Han, WH, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(1308Kb)  |  收藏  |  浏览/下载：1243/368  |  提交时间：2010/03/09
SHicon-based resonant-cavity-enhanced photodetectors 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Cheng BW (Cheng Buwen);  Li CB (Li Chuanbo);  Mao RW (Mao Rongwei);  Yao F (Yao Fei);  Xue CL (Xue Chunlai);  Zhang JG (Zhang Jianguo);  Shi WH (Shi Wenhua);  Zuo YH (Zuo Yuhua);  Yu JZ (Yu Jinzhong);  Wang QM (Wang Qiming);  Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(288Kb)  |  收藏  |  浏览/下载：1418/338  |  提交时间：2010/03/29
High-speed  
Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Gong, M (Gong, Meng);  Fang, ZD (Fang, Zhidan);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1285/288  |  提交时间：2010/03/29
Surface Morphology Evolution  Inas Nanostructures  Island-pit Pairs  Molecular-beam Epitaxy  Quantum Dots  Cooperative Nucleation  Heteroepitaxy  Transition  Islands  Growth  
1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 08-11, 2004
作者:  Li CB;  Cheng BW;  Mao RW;  Zuo YH;  Yu JZ;  Wang QM;  Li, CB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1595/292  |  提交时间：2010/03/29
Wave-guide Photodetector  
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Shi GX;  Xu B;  Ye XL;  Jin P;  Chen YH;  Wang YL;  Cui CX;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(869Kb)  |  收藏  |  浏览/下载：1422/273  |  提交时间：2010/03/29
1.3 Mu-m  
Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Cui CX;  Chen YH;  Zhang CL;  Jin P;  Xu B;  Shi GX;  Zhao C;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(598Kb)  |  收藏  |  浏览/下载：1339/313  |  提交时间：2010/03/29
Quantum Dots  
Controllable growth of semiconductor nanometer structures 会议论文
MICROELECTRONICS JOURNAL, 34 (5-8), FORTALEZA, BRAZIL, DEC 08-13, 2002
作者:  Wang ZG;  Wu J;  Wang ZG Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(249Kb)  |  收藏  |  浏览/下载：1168/233  |  提交时间：2010/11/15
Inas Quantum Dots  Self-organization  Monolayer Coverage  Density  Gaas  Islands  Inp(001)  Epitaxy  
Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Yu JZ;  Huang CJ;  Cheng BW;  Zuo YH;  Luo LP;  Wang QM;  Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1587Kb)  |  收藏  |  浏览/下载：1039/164  |  提交时间：2010/11/15
Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Huang CJ;  Zuo YH;  Li C;  Li DZ;  Cheng BW;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1363/297  |  提交时间：2010/10/29
Ge/si Islands  Quantum Dot  Band Alignment  Pl  Si/si1-xgex Quantum-wells  Stranski-krastanov Growth  Ii Band Alignment  Ge Islands  Temperature-dependence  Photoluminescence  Layers  Luminescence  Organization  Mechanism  
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1207/0  |  提交时间：2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain