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AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1999/451  |  提交时间：2010/03/09
Performance  Heterostructures  Optimization  Mobility  
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1392/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1515/258  |  提交时间：2010/10/29
Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)  |  收藏  |  浏览/下载：1501/329  |  提交时间：2010/10/29
Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
MICRON, 35 (6), Wuhan, PEOPLES R CHINA, OCT 17-21, 2003
作者:  Luo XH;  Wang RM;  Zhang XP;  Zhang HZ;  Yu DP;  Luo MC;  Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
Adobe PDF(419Kb)  |  收藏  |  浏览/下载：1400/365  |  提交时间：2010/10/29
Transmission Electron Microscopy  Electron Energy Loss Spectroscopy  Molecular Beam Epitaxy  Gallium Nitride  Chemical-vapor-deposition  Epitaxy  Layer  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1494/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Optical study of localized and delocalized states in GaAsN/GaAs 会议论文
GAN AND RELATED ALLOYS - 2003, 798, Boston, MA, DEC 01-05, 2003
作者:  Xu ZY;  Luo XD;  Yang XD;  Tan PH;  Yang CL;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Xu ZY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1588/334  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Alloys  Gaas1-xnx  Photoluminescence  Relaxation  
Nano-layer structure of silicon-on-insulator materials 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:  Wang X;  Chen M;  Chen J;  Dong YN;  Liu XH;  He P;  Tian LL;  Liu ZL;  Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China.
Adobe PDF(1181Kb)  |  收藏  |  浏览/下载：1185/242  |  提交时间：2010/11/15
Soi  Nanostructure  Microelectronic Materials  
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Ye XL;  Chen YH;  Xu B;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1061/220  |  提交时间：2010/11/15
Reflectance-difference Spectroscopy  Indium Segregation  Ingaas/gaas Quantum Wells  Epitaxy-grown Ingaas/gaas  Surface Segregation  Interface  
Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
作者:  Deng X;  Wang W;  Han S;  Povolny H;  Du W;  Liao X;  Xiang X;  Liao X Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(635Kb)  |  收藏  |  浏览/下载：1408/437  |  提交时间：2010/11/15