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Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:  Ji HM;  Yang T;  Cao YL;  Ma WQ;  Cao Q;  Chen LH;  Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(244Kb)  |  收藏  |  浏览/下载：1635/328  |  提交时间：2010/03/09
Density-of-states  
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
作者:  Zhao C;  Chen YH;  Xu B;  Tang CG;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(334Kb)  |  收藏  |  浏览/下载：1837/335  |  提交时间：2010/03/09
Molecular-beam Epitaxy  
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
JOURNAL OF APPLIED PHYSICS
作者:  Chen J;  Fan WJ;  Xu Q;  Zhang XW;  Li SS;  Xia JB;  Chen, J, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
Adobe PDF(1459Kb)  |  收藏  |  浏览/下载：1307/208  |  提交时间：2010/03/09
Emission  
Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liu L;  Chen NF;  Gao FB;  Yin ZG;  Bai YM;  Zhang XW;  Liu, L, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1369/304  |  提交时间：2010/03/09
Thermophotovoltaic Cell  
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Chen YH;  Tang CH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(2531Kb)  |  收藏  |  浏览/下载：1332/187  |  提交时间：2010/03/09
Inas  
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Lei W;  Chen YH;  Jin P;  Xu B;  Ye XL;  Wang ZG;  Huang XQ;  Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载：1417/261  |  提交时间：2010/03/29
Lateral Intersubband Photocurrent  
Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates 会议论文
Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials, Hangzhou, PEOPLES R CHINA, OCT 16-18, 2006
作者:  Liang S;  Zhu HL;  Zhou JT;  Cheng YB;  Pan JQ;  Zhao LJ;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(245Kb)  |  收藏  |  浏览/下载：1123/227  |  提交时间：2010/03/29
Chemical-vapor-deposition  
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
THIN SOLID FILMS, Taipei, TAIWAN, NOV 12-14, 2004
作者:  Kong LM;  Cai JF;  Wu ZY;  Gong Z;  Niu ZC;  Feng ZC;  Feng, ZC, Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei, Taiwan. 电子邮箱地址: zcfeng@cc.ee.nut.edu.tw
Adobe PDF(152Kb)  |  收藏  |  浏览/下载：1596/489  |  提交时间：2010/03/29
Time-resolved Photoluminescence  
Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Wang YL;  Wu J;  Chen YH;  Wang ZG;  Zeng YP;  Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(4662Kb)  |  收藏  |  浏览/下载：1207/180  |  提交时间：2010/03/29
Layer-ordering Orientation  
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Shi GX;  Xu B;  Ye XL;  Jin P;  Chen YH;  Wang YL;  Cui CX;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(869Kb)  |  收藏  |  浏览/下载：1409/273  |  提交时间：2010/03/29
1.3 Mu-m