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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Niu, ZC
;
Zhang, SY
;
Ni, HQ
;
Wu, DH
;
He, ZH
;
Sun, Z
;
Han, Q
;
Wu, RG
;
Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)
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收藏
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浏览/下载:1410/372
  |  
提交时间:2010/03/29
Improved Luminescence Efficiency
Temperature
Photoluminescence
Nitrogen
Origin
Diodes
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)
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收藏
  |  
浏览/下载:1626/401
  |  
提交时间:2010/03/29
Gainnas/gaas Quantum Wells
Optical Properties
Nonradiative Recombination Effect
Time-resolved Photoluminescence
Pl Decay Dynamics
Pl Thermal Quenching
Molecular-beam Epitaxy
Gaasn Alloys
Excitation
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells
会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:
Jiang DS
;
Liang XG
;
Sun BQ
;
Bian L
;
Li LH
;
Pan Z
;
Wu RG
;
Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)
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收藏
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浏览/下载:1308/283
  |  
提交时间:2010/10/29
Luminescence
Localization
Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Xu YQ
;
Li LH
;
Pan Z
;
Lin YW
;
Wang QM
;
Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(157Kb)
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收藏
  |  
浏览/下载:1096/221
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Mu-m
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Zhang W
;
Pan Z
;
Li LH
;
Zhang RK
;
Lin YW
;
Wu RG
;
Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:948/0
  |  
提交时间:2010/10/29
Gainnas
Photodetector
Resonant Cavity Enhanced
High Speed Property
Molecular-beam Epitaxy
Schottky Photodiodes
Performance
Efficiency
Operation
Bandwidth
Design
Si
1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Zhong P
;
Lin YW
;
Li LH
;
Xu YQ
;
Wei Z
;
Wu RH
;
Lin YW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1054/0
  |  
提交时间:2010/10/29
Operation
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
;
Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)
  |  
收藏
  |  
浏览/下载:1150/219
  |  
提交时间:2010/11/15
Adsorption
Characterization
Radiation
Molecular Beam Epitaxy
Nitrides
Surface-emitting Laser
Quantum-wells
Operation
Range
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Li LH
;
Pan Z
;
Zhang W
;
Lin YW
;
Wang XY
;
Wu RH
;
Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)
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收藏
  |  
浏览/下载:1329/268
  |  
提交时间:2010/11/15
Characterization
Defects
X-ray Diffraction
Molecular Beam Epitaxy
Nitrides
Gaas
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Sun BQ
;
Jiang DS
;
Pan Z
;
Li LH
;
Wu RH
;
Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)
  |  
收藏
  |  
浏览/下载:1124/261
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Semiconducting Iiiv Materials
Luminescence
Gaasn
GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy
会议论文
COMMAD 2000 PROCEEDINGS, BUNDOORA, AUSTRALIA, DEC 06-08, 2000
作者:
Pan Z
;
Li LH
;
Wang XY
;
Lin YW
;
Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)
  |  
收藏
  |  
浏览/下载:1108/224
  |  
提交时间:2010/10/29
Operation
会议主办方: La Trobe Univ
Depts Electr Engn & Phys