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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
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浏览/下载:1941/451
  |  
提交时间:2010/03/09
Performance
Heterostructures
Optimization
Mobility
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
;
Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(929Kb)
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浏览/下载:3538/1292
  |  
提交时间:2010/03/09
Gan
Nitrides
Led
Mocvd
Patterned Sapphire Substrate
Wet Etching
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
;
Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(202Kb)
  |  
收藏
  |  
浏览/下载:1590/528
  |  
提交时间:2010/03/29
Aln
Impurities
Donor
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
;
Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)
  |  
收藏
  |  
浏览/下载:1176/345
  |  
提交时间:2010/11/15
Impurities
Molecular Beam Epitaxy
Nitrides
Semiconducting Iii-v Materials
Gallium Nitride
Sapphire Substrate
Defects
Heterostructure
Semiconductors
Stress
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Liu HY
;
Xu B
;
Ding D
;
Chen YH
;
Zhang JF
;
Wu J
;
Wang ZG
;
Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
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收藏
  |  
浏览/下载:1226/319
  |  
提交时间:2010/11/15
Low Dimensional Structures
Molecular Beam Epitaxy
Nanomaterials
Inas Islands
Gaas
Growth
Gaas(100)
Thickness
Density
In situ annealing during the growth of relaxed SiGe
会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:
Li DZ
;
Huang CJ
;
Cheng BW
;
Wang HJ
;
Yu Z
;
Zhang CH
;
Yu JZ
;
Wang QM
;
Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)
  |  
收藏
  |  
浏览/下载:1063/204
  |  
提交时间:2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition
Sige
Refractive High Energy Electron Diffraction
Tansmission Electron Microscopy
Double Crystal X-ray Diffraction
Mobility 2-dimensional Electron
Critical Thickness
Strained Layers
Ge
Relaxation
Epilayers
Si1-xgex
Gesi/si
Gases
A model of dislocations at the interface of the bonded wafers
会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:
Han WH
;
Yu JZ
;
Wang LC
;
Wei HZ
;
Zhang XF
;
Wang QM
;
Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)
  |  
收藏
  |  
浏览/下载:1459/266
  |  
提交时间:2010/10/29
Wafer Bonding
Heteroepitaxy
Lattice Mismatch
Edge-like Dislocations
Thermal Stress
60 Degrees Dislocation Lines
Gaas
Preparation and characterization of erbium doped sol-gel silica glasses
会议论文
RARE-EARTH-DOPED MATERIALS AND DEVICES III, 3622, SAN JOSE, CA, JAN 27-28, 1999
作者:
Lei HB
;
Yang QQ
;
Ou HY
;
Chen BW
;
Yu JZ
;
Wang QM
;
Xie DT
;
Wu JG
;
Xu DF
;
Xu GX
;
Lei HB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(461Kb)
  |  
收藏
  |  
浏览/下载:1523/368
  |  
提交时间:2010/10/29
Er-doped Silica Glass
Sol-gel Process
Photoluminescence
Planar Wave-guides
Molecular-beam Epitaxy
Crystal Silicon
Implanted Si
Luminescence
Electroluminescence
Fabrication
Impurities
Films
Ions
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Peng CS
;
Chen H
;
Zhao ZY
;
Li JH
;
Dai DY
;
Huang Q
;
Zhou JM
;
Zhang YH
;
Tung CH
;
Sheng TT
;
Wang J
;
Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)
  |  
收藏
  |  
浏览/下载:1423/311
  |  
提交时间:2010/11/15
Threading Dislocation
Si(100)
Layers
Films
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing
会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:
Mo QW
;
Fan TW
;
Gong Q
;
Wu J
;
Wang ZG
;
Bai YQ
;
Zhang W
;
Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(201Kb)
  |  
收藏
  |  
浏览/下载:1331/316
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Coherent Islands
Gaas
Growth
Dots
Dislocations
Temperature
Mechanisms
Si(001)
Ingaas