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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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High polarization single dipole mode photonic crystal microlaser
会议论文
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009): 843-844 2009, Hong Kong, PEOPLES R CHINA, JUL 13-17, 2009
作者:
Chen W (Chen Wei)
;
Xing MX (Xing Mingxin)
;
Zhou WJ (Zhou Wenjun)
;
Liu AJ (Liu Anjin)
;
Chen LH (Chen Lianghui)
;
Zheng WH (Zheng Wanhua)
Adobe PDF(226Kb)
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浏览/下载:1481/250
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提交时间:2011/07/14
Investigation on pressure sensitivity of fiber optic mandrel hydrophone - art. no. 659544
会议论文
Fundamental Problems of Optoelectronics and Microelectronics III丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Harbin, PEOPLES R CHINA, SEP 12-14, 2006
作者:
Zhang, WT (Zhang, Wentao)
;
Liu, YL (Liu, Yuliang)
;
Li, F (Li, Fang)
;
Zhang, WT, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(185Kb)
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浏览/下载:1234/368
  |  
提交时间:2010/03/29
Pressure Sensitivity
Fiber Optic
Hydrophone
Transduction
Investigation on acceleration response of fiber optic mandrel hydrophone
会议论文
4th International Symposium on Instrumentation Science and Technology (ISIST' 2006)丛书标题: JOURNAL OF PHYSICS CONFERENCE SERIES, Harbin, PEOPLES R CHINA, AUG 08-12, 2006
作者:
Zhang, WT (Zhang, W. T.)
;
Liu, YL (Liu, Y. L.)
;
Li, F (Li, F.)
;
Zhang, WT, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(81Kb)
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浏览/下载:942/233
  |  
提交时间:2010/03/29
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Zhou HY
;
Qu SC
;
Wang ZG
;
Liang LY
;
Cheng BC
;
Liu JP
;
Peng WQ
;
Zhou, HY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouhy@mail.semi.ac.cn
Adobe PDF(164Kb)
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浏览/下载:1932/369
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提交时间:2010/03/29
Anodic Alumina Films
Recent progresses of silicon-based optoelectronic devices for application in fiber communication
会议论文
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Hong Kong, PEOPLES R CHINA, SEP 29-OCT 01, 2004
作者:
Yu, JZ
;
Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
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浏览/下载:1130/266
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提交时间:2010/03/29
Low-power-consumption
Modulator
Photodetector
Fabrication
Diode
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:
Niu ZC
;
Wang XD
;
Miao ZH
;
Lan Q
;
Kong YC
;
Zhou DY
;
Feng SL
;
Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏
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浏览/下载:1207/0
  |  
提交时间:2010/10/29
Molecular Beam Epitaxy
Ingaas Islands
Photolumineseence
Line-width
1.3 Mu-m
Inas/gaas Quantum Dots
Optical-properties
Cap Layer
Gaas
Luminescence
Strain
Self-assembled quantum dots, wires and quantum-dot lasers
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Wang ZG
;
Chen YH
;
Liu FQ
;
Xu B
;
Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(289Kb)
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浏览/下载:1291/323
  |  
提交时间:2010/11/15
Low Dimensional Structures
Strain
Molecular Beam Epitaxy
Quantum Dots
Semiconducting Iii-v Materials
Laser Diodes
Well Lasers
Preparation and characterization of erbium doped sol-gel silica glasses
会议论文
RARE-EARTH-DOPED MATERIALS AND DEVICES III, 3622, SAN JOSE, CA, JAN 27-28, 1999
作者:
Lei HB
;
Yang QQ
;
Ou HY
;
Chen BW
;
Yu JZ
;
Wang QM
;
Xie DT
;
Wu JG
;
Xu DF
;
Xu GX
;
Lei HB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(461Kb)
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  |  
浏览/下载:1578/368
  |  
提交时间:2010/10/29
Er-doped Silica Glass
Sol-gel Process
Photoluminescence
Planar Wave-guides
Molecular-beam Epitaxy
Crystal Silicon
Implanted Si
Luminescence
Electroluminescence
Fabrication
Impurities
Films
Ions
New method for the growth of highly uniform quantum dots
会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
作者:
Pan D
;
Zeng YP
;
Kong MY
;
Pan D Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: dongpan@red.senu.ac.cn
Adobe PDF(274Kb)
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浏览/下载:1026/178
  |  
提交时间:2010/11/15
Self-formed Quantum Dot
Stranski-krastanow Growth Mode
Superlattice
Molecular-beam Epitaxy
Ingaas
Gaas
Dislocations
Multilayers
Defects
Strain