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Investigation on pressure sensitivity of fiber optic mandrel hydrophone - art. no. 659544 会议论文
Fundamental Problems of Optoelectronics and Microelectronics III丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Harbin, PEOPLES R CHINA, SEP 12-14, 2006
作者:  Zhang, WT (Zhang, Wentao);  Liu, YL (Liu, Yuliang);  Li, F (Li, Fang);  Zhang, WT, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(185Kb)  |  收藏  |  浏览/下载：1227/368  |  提交时间：2010/03/29
Pressure Sensitivity  Fiber Optic  Hydrophone  Transduction  
Investigation on acceleration response of fiber optic mandrel hydrophone 会议论文
4th International Symposium on Instrumentation Science and Technology (ISIST' 2006)丛书标题: JOURNAL OF PHYSICS CONFERENCE SERIES, Harbin, PEOPLES R CHINA, AUG 08-12, 2006
作者:  Zhang, WT (Zhang, W. T.);  Liu, YL (Liu, Y. L.);  Li, F (Li, F.);  Zhang, WT, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(81Kb)  |  收藏  |  浏览/下载：938/233  |  提交时间：2010/03/29
Recent progresses of silicon-based optoelectronic devices for application in fiber communication 会议论文
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Hong Kong, PEOPLES R CHINA, SEP 29-OCT 01, 2004
作者:  Yu, JZ;  Yu, JZ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1122/266  |  提交时间：2010/03/29
Low-power-consumption  Modulator  Photodetector  Fabrication  Diode  
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1187/0  |  提交时间：2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain  
Self-assembled quantum dots, wires and quantum-dot lasers 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Wang ZG;  Chen YH;  Liu FQ;  Xu B;  Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(289Kb)  |  收藏  |  浏览/下载：1277/323  |  提交时间：2010/11/15
Low Dimensional Structures  Strain  Molecular Beam Epitaxy  Quantum Dots  Semiconducting Iii-v Materials  Laser Diodes  Well Lasers  
Preparation and characterization of erbium doped sol-gel silica glasses 会议论文
RARE-EARTH-DOPED MATERIALS AND DEVICES III, 3622, SAN JOSE, CA, JAN 27-28, 1999
作者:  Lei HB;  Yang QQ;  Ou HY;  Chen BW;  Yu JZ;  Wang QM;  Xie DT;  Wu JG;  Xu DF;  Xu GX;  Lei HB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：1563/368  |  提交时间：2010/10/29
Er-doped Silica Glass  Sol-gel Process  Photoluminescence  Planar Wave-guides  Molecular-beam Epitaxy  Crystal Silicon  Implanted Si  Luminescence  Electroluminescence  Fabrication  Impurities  Films  Ions  
New method for the growth of highly uniform quantum dots 会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
作者:  Pan D;  Zeng YP;  Kong MY;  Pan D Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: dongpan@red.senu.ac.cn
Adobe PDF(274Kb)  |  收藏  |  浏览/下载：1013/178  |  提交时间：2010/11/15
Self-formed Quantum Dot  Stranski-krastanow Growth Mode  Superlattice  Molecular-beam Epitaxy  Ingaas  Gaas  Dislocations  Multilayers  Defects  Strain