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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
;
Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)
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浏览/下载:1860/307
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提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
Buffer Layer
Lpcvd
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)
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浏览/下载:1986/451
  |  
提交时间:2010/03/09
Performance
Heterostructures
Optimization
Mobility
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
;
Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)
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浏览/下载:1751/511
  |  
提交时间:2010/03/09
Hvpe
Gan
Nitridation
Polarity
Etching
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Liu, NX
;
Yan, JC
;
Liu, Z
;
Ma, P
;
Wang, JX
;
Li, JM
;
Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(370Kb)
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收藏
  |  
浏览/下载:2241/749
  |  
提交时间:2010/03/09
Algan
Ht-algan Buffer
Ht-interlayers
Ultraviolet (Uv) Led
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)
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收藏
  |  
浏览/下载:1572/341
  |  
提交时间:2010/03/29
Buffer Layer
Stress
Photodiodes
Reduction
Detectors
Sapphire
Epitaxy
Growth
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Fang, ZD (Fang, Zhidan)
;
Gong, M (Gong, Meng)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
;
Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)
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浏览/下载:1589/334
  |  
提交时间:2010/03/29
Quantum Dots
Photoluminescence
Combination Layer
1.3 Mu-m
Lasers
Inalas
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
MICRON, 35 (6), Wuhan, PEOPLES R CHINA, OCT 17-21, 2003
作者:
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
;
Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
Adobe PDF(419Kb)
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收藏
  |  
浏览/下载:1386/365
  |  
提交时间:2010/10/29
Transmission Electron Microscopy
Electron Energy Loss Spectroscopy
Molecular Beam Epitaxy
Gallium Nitride
Chemical-vapor-deposition
Epitaxy
Layer
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1172Kb)
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收藏
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浏览/下载:1125/196
  |  
提交时间:2010/03/29
Si(111)
Aln
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask
会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:
Feng G
;
Shen XM
;
Zhu JJ
;
Zhang BS
;
Yang H
;
Liang JW
;
Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(92Kb)
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收藏
  |  
浏览/下载:1223/308
  |  
提交时间:2010/10/29
Buffer Layer
Substrate
Diodes
Growth
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6), Sendai, JAPAN, MAR 20-22, 2003
作者:
Leung BH
;
Fong WK
;
Surya C
;
Lu LW
;
Ge WK
;
Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
Adobe PDF(191Kb)
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  |  
浏览/下载:1335/281
  |  
提交时间:2010/10/29
Gan
Low-frequency Noise
Deep Levels
Deep Level Transient Fourier Spectroscopy
Devices