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High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Wang, XY (Wang, Xiaoyan);  Wang, XL (Wang, Xiaoliang);  Wang, BZ (Wang, Baozhu);  Xiao, HL (Xiao, Hongling);  Liu, HX (Liu, Hongxin);  Wang, JX (Wang, Junxi);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1578/341  |  提交时间：2010/03/29
Buffer Layer  Stress  Photodiodes  Reduction  Detectors  Sapphire  Epitaxy  Growth  
Stress analysis of silica-based arrayed waveguide grating by a finite element method 会议论文
MATERIALS, DEVICES, AND SYSTEMS FOR DISPLAY AND LIGHTING, 4918, SHANGHAI, PEOPLES R CHINA, OCT 14-18, 2002
作者:  Deng XQ;  Yang QQ;  Wang HJ;  Hu XW;  Wang QM;  Deng XQ Chinese Acad Sci Inst Semicond R&D Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(256Kb)  |  收藏  |  浏览/下载：1221/269  |  提交时间：2010/10/29
Finite Element Method  Stress  Silica Optical Waveguide On silicOn  Birefringence  Optical Wave-guides  Difference Method  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1233/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1518/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas  
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1311/307  |  提交时间：2010/11/15
Stress  Growth