中文版 | English

在结果中检索

SEMI OpenIR
（本次检索基于用户作品认领结果）

浏览/检索结果: 共4条，第1-4条 帮助

限定条件            
已选(0)清除 条数/页：   排序方式：
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(47Kb)  |  收藏  |  浏览/下载：1412/302  |  提交时间：2010/10/29
Spectrum  
Self-assembled quantum dots, wires and quantum-dot lasers 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Wang ZG;  Chen YH;  Liu FQ;  Xu B;  Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(289Kb)  |  收藏  |  浏览/下载：1293/323  |  提交时间：2010/11/15
Low Dimensional Structures  Strain  Molecular Beam Epitaxy  Quantum Dots  Semiconducting Iii-v Materials  Laser Diodes  Well Lasers  
High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers 会议论文
1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, SHATIN, HONG KONG, 36337
作者:  Wang ZG;  Liang JB;  Qian G;  Xu B;  Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1049/176  |  提交时间：2010/10/29
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
作者:  Chen YH;  Yang Z;  Wang ZG;  Xu B;  Liang JB;  Qian JJ;  Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：1304/301  |  提交时间：2010/11/15
Znse/gaas Interface  States