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Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 6 (5-6), Sendai, JAPAN, MAR 20-22, 2003
作者:  Leung BH;  Fong WK;  Surya C;  Lu LW;  Ge WK;  Surya C Hong Kong Polytech Univ Photon Res Ctr Dept Elect & Informat Engn Hong Kong Hong Kong Peoples R China. 电子邮箱地址: ensurya@polyu.edu.hk
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1336/281  |  提交时间：2010/10/29
Gan  Low-frequency Noise  Deep Levels  Deep Level Transient Fourier Spectroscopy  Devices  
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
作者:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(47Kb)  |  收藏  |  浏览/下载：1407/302  |  提交时间：2010/10/29
Spectrum  
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:  Lan Q;  Niu ZC;  Zhou DY;  Kong YC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Natl Lab Superlattices Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(252Kb)  |  收藏  |  浏览/下载：1047/218  |  提交时间：2010/11/15