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Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang XH;  Zhang Z;  Wang ZG;  Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Stretched Exponential  Time-resolved Photolummescence  Metalorganic Vapor Phase Epitaxy  Nitrides  Inalgan  Inxalyga1-x-yn Quaternary Alloys  Time-resolved Photoluminescence  Multiple-quantum Wells  Alingan/gan Heterostructures  Gan  Decay  Luminescence  Sapphire  Devices  Silicon