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门控荧光寿命成像系统设计及图像算法实现 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  刘洋
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Uncovering many-body correlations in nanoscale nuclear spin baths by central spin decoherence 期刊论文
NATURE COMMUNICATIONS, 2014, 卷号: 5, 页码: 4822
Authors:  Ma, WL;  Wolfowicz, G;  Zhao, N;  Li, SS;  Morton, JJL;  Liu, RB
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Lifetime computing algorithms based on exponential pattern retrieve and polynomial fitting in fluorescence lifetime imaging microscopy 期刊论文
Proceedings of SPIE- The International Society for Optical Engineering, 2011, 卷号: 8200, 页码: 82000X
Authors:  Liu, Chao;  Zhou, Yan;  Wang, Xinwei;  Liu, Yuliang;  Liu, C.
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Fluorescence  Numerical Analysis  Optical Instruments  Technology  
Antibunching and blinking from a single colloidal CdSe quantum dot 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 卷号: 53, 期号: 9, 页码: 1619-1625
Authors:  Xu X (Xu XingSheng);  Chen SA (Chen Shuai);  Yamada T (Yamada Toshiki)
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Single Photon Source  Quantum Dot  Lifetime  
Correlations between antibunching and blinking of photoluminescence from a single CdSe quantum dot 期刊论文
EUROPEAN PHYSICAL JOURNAL D, 2009, 卷号: 55, 期号: 3, 页码: 691-697
Authors:  Xu, XS (Xu, X. S.);  Yamada, T (Yamada, T.);  Yokoyama, S (Yokoyama, S.);  Xu, XS, Natl Inst Informat & Commun Technol, Kobe Adv Res Ctr, Nishi Ku, 588-2 Iwaoka, Kobe, Hyogo 6512492, Japan. 电子邮箱地址: xsxu@red.semi.ac.cn
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Fluorescence  
InGaAlN四元合金的光学性质和低维结构 期刊论文
液晶与显示, 2004, 卷号: 19, 期号: 1, 页码: 5-9
Authors:  刘祥林;  董逊;  黎大兵
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Growth and photoluminescence of InAlGaN films 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang ZG;  Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Multiple-quantum Wells  Quaternary Alloys  Optical-properties  
A study of the growth and optical properties of AlInGaN alloys 期刊论文
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 10, 页码: 2632-2637
Authors:  Huang JS;  Dong X;  Lu XL;  Xu ZY;  Ge WK;  Huang JS,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
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Alingan  Mocvd  Localized Exitons  Quantum Dots  Time-resolved Photoluminescence  Multiple-quantum Wells  Luminescence  Relaxation  Silicon  Gan  
Time-resolved photoluminescence studies of AlInGaN alloys 期刊论文
CHINESE PHYSICS LETTERS, 2003, 卷号: 20, 期号: 7, 页码: 1148-1150
Authors:  Dong X;  Huang JS;  Li DB;  Liu XL;  Xu ZY;  Wang ZG;  Dong X,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,Beijing 100083,Peoples R China.
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Inxalyga1-x-yn Quaternary Alloys  Luminescence  
Localized exciton dynamics in AlInGaN alloy 期刊论文
SOLID STATE COMMUNICATIONS, 2003, 卷号: 126, 期号: 8, 页码: 473-477
Authors:  Huang JS;  Dong X;  Luo XD;  Liu XL;  Xu ZY;  Ge WK;  Huang JS,POB 912 NLSM,Beijing 100083,Peoples R China.
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Alingan  Quantum Dots  Hopping  Stretched-exponential Decay  Multiple-quantum Wells  Light-emitting-diodes  Time-resolved Photoluminescence  Chemical-vapor-deposition  Thermal-activation  Luminescence  Transitions  Relaxation  Silicon  Layers