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Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Huang CJ;  Zuo YH;  Li C;  Li DZ;  Cheng BW;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载:1604/297  |  提交时间:2010/10/29
Ge/si Islands  Quantum Dot  Band Alignment  Pl  Si/si1-xgex Quantum-wells  Stranski-krastanov Growth  Ii Band Alignment  Ge Islands  Temperature-dependence  Photoluminescence  Layers  Luminescence  Organization  Mechanism  
无权访问的条目 期刊论文
作者:  Huang CJ;  Tang Y;  Li DZ;  Cheng BW;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China. 电子邮箱地址: cjhuang@red.semi.ac.cn
Adobe PDF(47Kb)  |  收藏  |  浏览/下载:889/289  |  提交时间:2010/08/12