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Photoluminescence measurements on erbium-doped silicon 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Lei HB;  Yang QQ;  Ou HY;  Wang QM;  Lei HB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(310Kb)  |  收藏  |  浏览/下载：1362/233  |  提交时间：2010/10/29
Erbium-doped Silicon  Photoluminescence  Energy Transfer