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On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Shou-Li Z;  De-Ping X;  Ya-Li I;  Hai-Lin C;  Yin-Zhe C;  Ang M;  Ji-He L;  Jun-Hua G;  Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载：1645/301  |  提交时间：2010/03/09
Rce- P-i-n-pd  
Nano-layer structure of silicon-on-insulator materials 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:  Wang X;  Chen M;  Chen J;  Dong YN;  Liu XH;  He P;  Tian LL;  Liu ZL;  Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China.
Adobe PDF(1181Kb)  |  收藏  |  浏览/下载：1298/242  |  提交时间：2010/11/15
Soi  Nanostructure  Microelectronic Materials