High quality microcrystalline Si films by hydrogen dilution profile
Gu, JH (Gu, Jinhua); Zhu, MF (Zhu, Meifang); Wang, LJ (Wang, Liujiu); Liu, FZ (Liu, Fengzhen); Zhou, BQ (Zhou, Bingqing); Ding, K (Ding, Kun); Li, GH (Li, Guohua); Zhu, MF, Chinese Acad Sci, Grad Sch, Coll Phys Sci, POB 4588, Beijing 100049, Peoples R China. 电子邮箱地址: mfzhu@gucas.ac.cn
2006
会议名称12th International Conference on Thin Films
会议录名称THIN SOLID FILMS
页码515 (2): 452-455
会议日期SEP 15-20, 2002
会议地点BRATISLAVA, SLOVAKIA
出版地PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者ELSEVIER SCIENCE SA
ISSN0040-6090
部门归属chinese acad sci, grad sch, coll phys sci, beijing 100049, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.
关键词Microcrystalline Si Thin Film
学科领域半导体材料
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9980
专题中国科学院半导体研究所(2009年前)
通讯作者Zhu, MF, Chinese Acad Sci, Grad Sch, Coll Phys Sci, POB 4588, Beijing 100049, Peoples R China. 电子邮箱地址: mfzhu@gucas.ac.cn
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Gu, JH ,Zhu, MF ,Wang, LJ ,et al. High quality microcrystalline Si films by hydrogen dilution profile[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2006:515 (2): 452-455.
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