| SHicon-based resonant-cavity-enhanced photodetectors |
| Cheng BW (Cheng Buwen); Li CB (Li Chuanbo); Mao RW (Mao Rongwei); Yao F (Yao Fei); Xue CL (Xue Chunlai); Zhang JG (Zhang Jianguo); Shi WH (Shi Wenhua); Zuo YH (Zuo Yuhua); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming); Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
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| 2006
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| 会议名称 | 3rd International Conference on Group IV Photonics
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| 会议录名称 | 2006 3rd IEEE International Conference on Group IV Photonics
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| 页码 | 182-184
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| 会议日期 | SEP 13-15, 2006
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| 会议地点 | Ottawa, CANADA
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| 出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA
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| 出版者 | IEEE
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| ISBN | 978-1-4244-0095-9
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| 部门归属 | chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china
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| 摘要 | Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology. |
| 关键词 | High-speed
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| 学科领域 | 光电子学
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| 主办者 | IEEE.
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| 收录类别 | 其他
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| 语种 | 英语
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| 文献类型 | 会议论文
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| 条目标识符 | http://ir.semi.ac.cn/handle/172111/9782
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| 专题 | 中国科学院半导体研究所（2009年前）
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| 通讯作者 | Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China. |
推荐引用方式
GB/T 7714 |
Cheng BW ,Li CB ,Mao RW ,et al. SHicon-based resonant-cavity-enhanced photodetectors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2006:182-184.
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