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题名: XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells
作者: Sheng SR (Sheng Shuran);  Hao HY (Hao Huiying);  Diao HW (Diao Hongwei);  Zeng XB (Zeng Xiangbo);  Xu Y (Xu Ying);  Liao XB (Liao Xianbo);  Monchesky TL (Monchesky Theodore L.)
发表日期: 2006
摘要: Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: amorphous silicon
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sheng, SR (Sheng, Shuran); Hao, HY (Hao, Huiying); Diao, HW (Diao, Hongwei); Zeng, XB (Zeng, Xiangbo); Xu, Y (Xu, Ying); Liao, XB (Liao, Xianbo); Monchesky, TL (Monchesky, Theodore L.) .XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells ,APPLIED SURFACE SCIENCE,NOV 30 2006,253 (3):1677-1682
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