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题名: Visible blind p(+)-pi-n(-)-n(+) ultraviolet photodetectors based on 4H-SiC homoepilayers
作者: Liu XF;  Sun GS;  Li JM;  Ning J;  Luo MC;  Wang L;  Zhao WS;  Zeng YP
发表日期: 2006
摘要: p(+)-pi-n(-)-n(+) ultraviolet photodetectors based on 4H-SiC homoepilayers have been presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetectors was 300 x 300 mu m(2). The dark and illuminated I-V characteristics had been measured at reverse biases form 0 to 20 V at room temperature, and the illuminated current was at least two orders of magnitude than that of dark current below 13 V bias. The peak value zones of the photoresponse were located at 280-310 nm at different reverse biases, and the peak value located at 300 nm was 100 times greater than the cut-off response value in 380 nm at a bias of 10V, which showed the device had good visible blind performance. A small red-shift about 5 nm on the peak responsivity occurred when reverse bias increased from 5 to 15 V. (c) 2006 Elsevier Ltd. All rights reserved.
刊名: MICROELECTRONICS JOURNAL
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.) .Visible blind p(+)-pi-n(-)-n(+) ultraviolet photodetectors based on 4H-SiC homoepilayers ,MICROELECTRONICS JOURNAL,NOV 2006 ,37 (11):1396-1398
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