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题名: Deep level and photoluminescence studies of Er-implanted GaN films
作者: Song SF;  Chen WD;  Hsu CC;  Xu XR
发表日期: 2007
摘要: Deep level transient spectroscopy measurements were performed on the metal organic chemical vapor deposition epitaxially grown GaN before and after the implantation with Er. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300, 0.188, 0.600 and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees for 30 min. The origins of the deep defect levels were discussed. The photoluminescence (PL) properties of Er-implanted GaN thin films were also studied. After annealing at 900 degrees for 30 min in a nitrogen flow, Er-related 1.54 mu m luminescence peaks could be observed for the Er-implanted GaN sample. Moreover, the energy-transfer and recombination processes of the Er-implanted GaN film were described. (c) 2006 Elsevier B.V. All rights reserved.
刊名: JOURNAL OF LUMINESCENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Song SF (Song, S. F.); Chen, WD (Chen, W. D.); Hsu, CC (Hsu, C. C.); Xu, XR (Xu, Xurong) .Deep level and photoluminescence studies of Er-implanted GaN films ,JOURNAL OF LUMINESCENCE,JAN-APR 2007,122 Sp.Iss.SI (0):365-367
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