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题名: Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length
作者: Wang, YJ (Wang, Y. J.);  Xu, SJ (Xu, S. J.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Yang, H (Yang, H.);  Shan, XD (Shan, X. D.);  Yu, DP (Yu, D. P.)
发表日期: 2006
摘要: In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. (c) 2006 Optical Society of America.
刊名: OPTICS EXPRESS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, YJ (Wang, Y. J.); Xu, SJ (Xu, S. J.); Zhao, DG (Zhao, D. G.); Zhu, JJ (Zhu, J. J.); Yang, H (Yang, H.); Shan, XD (Shan, X. D.); Yu, DP (Yu, D. P.) .Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length ,OPTICS EXPRESS,DEC 25 2006,14 (26):13151-13157
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