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题名: Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer
作者: Sun, Q (Sun, Q.);  Wang, H (Wang, H.);  Jiang, DS (Jiang, D. S.);  Jin, RQ (Jin, R. Q.);  Huang, Y (Huang, Y.);  Zhang, SM (Zhang, S. M.);  Yang, H (Yang, H.);  Jahn, U (Jahn, U.);  Ploog, KH (Ploog, K. H.)
发表日期: 2006
摘要: The deep level luminescence of crack-free Al0.25Ga0.75N layers grown on a GaN template with a high-temperature grown AlN interlayer has been studied using spatially resolved cathodoluminescence (CL) spectroscopy. The CL spectra of Al0.25Ga0.75N grown on a thin AlN interlayer present a deep level aquamarine luminescence (DLAL) band at about 2.6 eV and a deep level violet luminescence (DLVL) band at about 3.17 eV. Cross-section line scan CL measurements on a cleaved sample edge clearly reveal different distributions of DLAL-related and DLVL-related defects in AlGaN along the growth direction. The DLAL band of AlGaN is attributed to evolve from the yellow luminescence band of GaN, and therefore has an analogous origin of a radiative transition between a shallow donor and a deep acceptor. The DLVL band is correlated with defects distributed near the GaN/AlN/AlGaN interfaces. Additionally, the lateral distribution of the intensity of the DLAL band shows a domainlike feature which is accompanied by a lateral phase separation of Al composition. Such a distribution of deep level defects is probably caused by the strain field within the domains. (c) 2006 American Institute of Physics.
KOS主题词: Light emitting diodes
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.) .Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer ,JOURNAL OF APPLIED PHYSICS,DEC 15 2006,100 (12):Art.No.123101
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