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题名: Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD
作者: Gao, HY (Gao, Haiyong);  Yan, FW (Yan, Fawang);  Li, JM (Li, Jinmin);  Wang, JX (Wang, Junxi);  Yan, JC (Yan, Jianchang)
发表日期: 2006
摘要: Nonpolar (1120) a-plane GaN thin films were grown on r-plane (1102) sapphire substrates by low-pressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the a-plane GaN films were investigated by means of polarized Raman scattering spectra in backscattering configurations. The experimental results show that there are strong anisotropic in-plane stresses within the epitaxial a-plane GaN films by calculating the corresponding stress tensors. The temperature dependence of Raman scattering spectra was studied in the range from 100 K to 550 K. The measurements reveal that the Raman phonon frequencies decrease with increasing temperature. The temperature at which nonpolar a-plane GaN films are strain free is discussed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
刊名: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Gao, HY (Gao, Haiyong); Yan, FW (Yan, Fawang); Li, JM (Li, Jinmin); Wang, JX (Wang, Junxi); Yan, JC (Yan, Jianchang) .Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD ,PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,DEC 2006,203 (15):3788-3792
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