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题名: Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure
作者: Feng W;  Pan JQ;  Cheng YB;  Liao ZY;  Wang BJ;  Zhou F;  Zhao LJ;  Zhu HL;  Wang W
发表日期: 2007
摘要: A buried grating structure with a selectively grown absorptive InGaAsP layer was fabricated and characterized by scanning electron microscopy and photoluminescence. The InP corrugation was etched by introducing a SiO2 mask that was more stable than a conventional photoresist mask during the etching process. Moreover, the corrugation was efficaciously preserved during the selective growth of the absorptive layer with the SiO2 mask. Though this absorptive layer was only selectively grown on the concave region of the corrugation, it has a high intensity around the peak wavelength in comparison with that of InGaAlAs multiple quantum well, which was grown on the buried grating structure.
KOS主题词: Vapor phase epitaxy
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Cheng, YB (Cheng, Y. B.); Liao, ZY (Liao, Z. Y.); Wang, BJ (Wang, B. J.); Zhou, F (Zhou, F.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) .Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure ,APPLIED PHYSICS LETTERS,JAN 1 2007,90 (1):Art.No.011117
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