高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition
作者: Wang H;  Huang Y;  Sun Q;  Chen J;  Zhu JJ;  Wang LL;  Wang YT;  Yang H;  Wu MF;  Qu YH;  Jiang DS
发表日期: 2007
摘要: Rutherford backscattering and channeling is combined with X-ray diffraction to study the depth dependence of crystalline quality in InN layers grown by metalorganic chemical vapor deposition on sapphire substrate. The poorest crystalline quality in InN layer is produced at the intermediate region over 100 nm away from the InN/sapphire interface. With increasing layer thickness the crystalline quality improves to a certain degree dependent on the growth temperature. The InN sample grown at 450 degrees C is found to be more homogeneous than the sample grown at 550 degrees C. The difference in the defect profile is explained by the temperature-dependent growth modes. The inhomogeneity of structural quality and related properties such as carrier concentration and strain field is possibly the reason to observe a high energy wing in PL spectrum of the InN sample grown at 550 degrees C. (c) 2006 Elsevier B.V All rights reserved.
KOS主题词: X-ray crystallography
刊名: MATERIALS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
2205.pdf287KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Wang, H (Wang, H.); Huang, Y (Huang, Y.); Sun, Q (Sun, Q.); Chen, J (Chen, J.); Zhu, JJ (Zhu, J. J.); Wang, LL (Wang, L. L.); Wang, YT (Wang, Y. T.); Yang, H (Yang, H.); Wu, MF (Wu, M. F.); Qu, YH (Qu, Y. H.); Jiang, DS (Jiang, D. S.) .Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition ,MATERIALS LETTERS,JAN 2007 ,61 (2):516-519
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Wang H]的文章
 [Huang Y]的文章
 [Sun Q]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Wang H]的文章
 [Huang Y]的文章
 [Sun Q]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发