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题名: Hole Rashba effect and g-factor in InP nanowires
作者: Zhang XW;  Xia JB
发表日期: 2007
摘要: The hole Rashba effect and g-factor in InP nanowires in the presence of electric and magnetic fields which bring spin splitting are investigated theoretically in the framework of eight-band effective-mass envelop function theory, by expanding the lateral wave function in Bessel functions. It is well known that the electron Rashba coefficient increases nearly linearly with the electric field. As the Rashba spin splitting is zero at zero k(z) ( the wave vector along the wire direction), the electron g-factor at k(z) = 0 changes little with the electric field. While we find that as the electric field increases, the hole Rashba coefficient increases at first, then decreases. It is noticed that the hole Rashba coefficient is zero at a critical electric field. The hole g-factor at k(z) = 0 changes obviously with the electric field.
KOS主题词: Nanowires
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, XW (Zhang, X. W.); Xia, JB (Xia, J. B.) .Hole Rashba effect and g-factor in InP nanowires ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,JAN 21 2007,40 (2):541-546
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