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题名: Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
作者: Feng W;  Pan JQ;  Wang LF;  Bian J;  Wang BJ;  Zhou F;  An X;  Zhao LJ;  Zhu HL;  Wang W
发表日期: 2007
摘要: Fabrication of InGaAlAs MQW buried heterostructure (BH) lasers by narrow stripe selective MOVPE is demonstrated in this paper. High quality InGaAlAs MQWs were first grown by narrow stripe selective MOVPE without any etching process and assessed by analysing the cross sections and PL spectrums of the InGaAlAs MQWs. Furthermore, BHs were fabricated for the InGaAlAs MQW lasers by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good device characteristics, with a high internal differential quantum efficiency of 85% and a low internal loss of 6.7 cm(-1). Meanwhile, narrow divergence angles of the far field pattern are obtained for the fabricated lasers.
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Wang, LF (Wang, L. F.); Bian, J (Bian, J.); Wang, BJ (Wang, B. J.); Zhou, F (Zhou, F.); An, X (An, X.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) .Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,JAN 21 2007,40 (2):361-365
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