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题名: Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)
作者: Wu JJ (Wu Jiejun);  Zhang GY (Zhang Guoyi);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping)
发表日期: 2007
摘要: Low indium content InGaN/AlGaN multiple quantum wells (MQWs) have been grown on Si(111) substrate by metal-organic chemical vapour deposition (MOCVD). A new method of using an isoelectronic indium-doped AlGaN barrier has been found to be very effective in improving the crystalline quality and interfacial abruptness of InGaN quantum well layers. We grew five periods of In0.06Ga0.94N/Al0.20Ga0.80N:In MQWs with In-doped barrier layers and obtained strong near-ultraviolet (UV) emission (similar to 400 nm) at room temperature. An In-doped AlGaN barrier improves the room-temperature PL intensity of InGaN/AlGaN MQWs, making it a candidate barrier for a near-UV source on Si substrate.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating
刊名: NANOTECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wu, JJ (Wu, Jiejun); Zhang, GY (Zhang, Guoyi); Liu, XL (Liu, Xianglin); Zhu, QS (Zhu, Qinsheng); Wang, ZG (Wang, Zhanguo); Jia, QJ (Jia, Quanjie); Guo, LP (Guo, Liping) .Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) ,NANOTECHNOLOGY,JAN 10 2007,18 (1):Art.No.015402
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