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题名: Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal
作者: Ma XT (Ma Xiao-Tao);  Zheng WH (Zheng Wan-Hua);  Ren G (Ren Gang);  Fan ZC (Fan Zhong-Chao);  Chen CH (Chen Chang-Hui)
发表日期: 2007
摘要: Inductively coupled plasma (ICP) etching of InP in Cl-2/BCl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional InP/InGaAsP photonic crystal. The etching mechanisms are discussed and the effect of plasma heating on wafer during etching is analyzed. It is shown that the balance between the undercut originating from plasma heating and the redeposition of sputtering on the side-wall is crucial for highly anisotropic etching, and the balance point moves toward lower bias when the ICP power is increased. High aspect-ratio etching at the DC bias of 203 V is obtained. Eventually, photonic crystal structure with nearly 90 degrees side-wall is achieved at low DC bias after optimization of the gas mixture.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Ma, XT (Ma Xiao-Tao); Zheng, WH (Zheng Wan-Hua); Ren, G (Ren Gang); Fan, ZC (Fan Zhong-Chao); Chen, CH (Chen Chang-Hui) .Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal ,ACTA PHYSICA SINICA,FEB 2007,56 (2):977-981
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