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题名: Systematic considerations for the patterning of photonic crystal devices by electron beam lithography
作者: Yu HJ (Yu Hejun);  Yu JZ (Yu Jinzhong);  Sun F (Sun Fei);  Li ZY (Li Zhiyong);  Chen SW (Chen Shaowu)
发表日期: 2007
摘要: Photonic crystal devices with feature sizes of a few hundred nanometers are often fabricated by electron beam lithography. The proximity effect, stitching error and resist profiles have significant influence on the pattern quality, and therefore determine the optical properties of the devices. In this paper, detailed analyses and simple solutions to these problems are presented. The proximity effect is corrected by the introduction of a compensating dose. The influence of the stitching error is alleviated by replacing the original access waveguides with taper-added waveguides, and the taper parameters are also discussed to get the optimal choice. It is demonstrated experimentally that patterns exposed with different doses have almost the same edge-profiles in the resist for the same development time, and that optimized etching conditions can improve the wall angle of the holes in the substrate remarkably. (c) 2006 Elsevier B.V. All rights reserved.
刊名: OPTICS COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Yu, HJ (Yu, Hejun); Yu, JZ (Yu, Jinzhong); Sun, F (Sun, Fei); Li, ZY (Li, Zhiyong); Chen, SW (Chen, Shaowu) .Systematic considerations for the patterning of photonic crystal devices by electron beam lithography ,OPTICS COMMUNICATIONS,MAR 1 2007,271 (1):241-247
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