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题名: Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE
作者: Wei TB (Wei Tong-Bo);  Ma P (Ma Ping);  Duan RF (Duan Rui-Fei);  Wang JX (Wang Jun-Xi);  Li JM (Li Jin-Min);  Zeng YP (Zeng Yi-Ping)
发表日期: 2007
摘要: Thick GaN films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The optical and structural properties of large scale columnar do-mains near the interface are studied using cathodoluminescence and micro-Raman scattering. These columnar do-mains Show a strong emission intensity due to extremely high free carrier concentration up to 2 x 10(19) cm(-3), which are related with impurities trapped in structural defects. The compressive stress in GaN Elm clearly decreases with increasing distance from interface. The quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer.
KOS主题词: Vapor phase epitaxy
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wei, TB (Wei Tong-Bo); Ma, P (Ma Ping); Duan, RF (Duan Rui-Fei); Wang, JX (Wang Jun-Xi); Li, JM (Li Jin-Min); Zeng, YP (Zeng Yi-Ping) .Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE ,CHINESE PHYSICS LETTERS,MAR 2007,24 (3):822-824
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