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题名: Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer
作者: Fang CB (Fang Cebao);  Wang XL (Wang Xiaoliang);  Xiao HL (Xiao Hongling);  Hu GX (Hu Guoxin);  Wang CM (Wang Cuimei);  Wang XY (Wang Xiaoyan);  Li JP (Li Jianping);  Wang JX (Wang Junxi);  Li CJ (Li Chengji);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zanguo)
发表日期: 2007
摘要: In undoped high-resistivity GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire, deep levels are investigated by persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) measurements. The PPC and OQ are studied by exciting the samples with two beams of radiation of various wavelengths and intensities. When the light wavelengths of 300 and 340 nm radiate the GaN epilayer, the photocurrent without any quenching effect is rapidly increased because the band gap transition only occurs. If the background light is 340 nm and the quenching light is 564 or 828 nm, the quenching of a small photocurrent generates but clearly. Two broad quenching bands that extend from 385 to 716 nm and from 723 to 1000 nm with a maximum at approximately 2.2 eV (566 nm) is observed. These quenching bands are attributed to hole trap level's existence in the GaN epilayer. We point out that the origin of the defects responsible for the optical quenching can be attributed to nitrogen antisite and/or gallium vacancy. (c) 2006 Elsevier B.V. All rights reserved.
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Fang, CB (Fang, Cebao); Wang, XL (Wang, Xiaoliang); Xiao, HL (Xiao, Hongling); Hu, GX (Hu, Guoxin); Wang, CM (Wang, Cuimei); Wang, XY (Wang, Xiaoyan); Li, JP (Li, Jianping); Wang, JX (Wang, Junxi); Li, CJ (Li, Chengji); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin); Wang, ZG (Wang, Zanguo) .Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer ,JOURNAL OF CRYSTAL GROWTH,JAN 2007,298 Sp.Iss.SI (0):800-803
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