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题名: Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD
作者: Liu Z (Liu Zhe);  Wang XL (Wang Xiaoliang);  Wang JX (Wang Junxi);  Hu GX (Hu Guoxin);  Guo LC (Guo Lunchun);  Li JP (Li Jianping);  Li JM (Li Jinmin);  Zeng YP (Zeng Yiping)
发表日期: 2007
摘要: Low temperature (LT) AlN interlayer and insertion of superlattice are two effective methods to reduce crack and defects for GaN grown on Si substrate. In this paper, the influence of two kinds of buffer on stress, morphology and defects of GaN/Si are studied and discussed. The results measured by optical microscope and Raman shift show that insertion of superlattice is more effective than insertion of LT-AlN in preventing the formation of cracks in GaN grown on Si substrate. Cross-sectional TEM images show that the not only screw but edge-type dislocation densities are greatly reduced by using the superlattice buffer. (c) 2006 Elsevier B.V. All rights reserved.
KOS主题词: characterization
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, Z (Liu, Zhe); Wang, XL (Wang, Xiaoliang); Wang, JX (Wang, Junxi); Hu, GX (Hu, Guoxin); Guo, LC (Guo, Lunchun); Li, JP (Li, Jianping); Li, JM (Li, Jinmin); Zeng, YP (Zeng, Yiping) .Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD ,JOURNAL OF CRYSTAL GROWTH,JAN 2007,298 Sp.Iss.SI (0):281-283
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